ASTM International Committee F01 on Electronics is currently developing a proposed new standard that will provide uniformity in the values reported for oxygen content in aluminum alloys used for sputtering targets in the manufacture of integrated circuits. The proposed standard, WK9120, Determination of Oxygen in High Purity Aluminum and Alloys in High Purity Aluminum Base by Inert Gas Fusion Technique, is under the jurisdiction of F01.17 on Sputter Metallization.

"The proposed standard is being developed because the measurement of oxygen in aluminum used for sputtering has been found to be a very important parameter that determines the quality of the sputtering target," says Patrick Germanaz, laboratory manager, Alcan PHP Mercus.

According to Germanaz, oxygen in aluminum is always in the form of aluminum oxide and as such will be a dielectric particle. Arcing that results when the dielectric particle becomes exposed to sputtering plasma can be a serious source of contamination that significantly reduces semiconductor device yield in the manufacture of integrated circuits. Thus, accurately determining the oxygen content in aluminum and being able to reduce particle contamination is an important commercial and scientific consideration.

Germanaz says that participation in this proposed standard activity is open to all, noting that the subcommittee is particularly seeking input from integrated circuit device makers and manufacturers of aluminum alloys.

For further technical information, contact Patrick Germanaz, Alcan, Mercus-Garrabet, France (phone: 05 61 02 42 40; Patrick.germanaz@alcan.com) or Charles Wickersham, Cabot Corporation, Columbus, Ohio (phone: 740/964-5799; cwickersham@ameritech.net). Committee F01 will meet Feb. 6-9, 2006, at the January-February Committee Week in Phoenix, Ariz. For membership or meeting details, contact Scott Orthey, ASTM International (phone: 610/832-9730; sorthey@astm.org).

Release #7236